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US Patent 12104276 Ga2O3-based single crystal substrate

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Is a

Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

121042760

Patent Inventor Names

Kohei Sasaki0

Date of Patent

October 1, 2024

Patent Application Number

172365640

Date Filed

April 21, 2021

Patent Citations

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US Patent 8747553 β-Ga

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US Patent 9716004 Crystal laminate structure and method for producing same

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US Patent 6951695 High surface quality GaN wafer and method of fabricating same

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US Patent 7393411 β-Ga

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US Patent 7713353 β-Ga

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US Patent 8262796 β-Ga

Patent Primary Examiner

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Shamim Ahmed

Patent abstract

Provided is a Ga

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