Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kohei Sasaki0
Date of Patent
July 25, 2017
Patent Application Number
14343355
Date Filed
August 2, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
A crystal laminate structure, in which crystals can be epitaxially grown on a β-Ga2O3-based substrate with high efficiency to produce a high-quality β-Ga2O3-based crystal film on the substrate; and a method for producing the crystal laminate structure are provided. The crystal laminate structure includes: a β-Ga2O3-based substrate, of which the major face is a face that is rotated by 50 to 90° inclusive with respect to face; and a β-Ga2O3-based crystal film which is formed by the epitaxial crystal growth on the major face of the β-Ga2O3-based substrate.
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