US Patent 7715228 Cross-point magnetoresistive memory
Patent 7715228 was granted and assigned to Nve Corporation on May, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A ferromagnetic thin-film based digital memory system having memory cells interconnected in a grid that are selected through voltage values supplied coincidently on interconnections made thereto for changing states thereof and determining present states thereof through suitable biasing of grid interconnections.
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US Patent 07715228 Cross-point magnetoresistive memory US Patent 7715228 Cross-point magnetoresistive memory
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Patent Number
0771522800
Patent Number
771522800
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Official Website
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
077152280
Date of Patent
May 11, 2010
0Patent Application Number
122295860
Date Filed
August 25, 2008
0Official Website
Patent Primary Examiner
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
077152280
Date of Patent
May 11, 2010
0Patent Application Number
122295860
Date Filed
August 25, 2008
0Official Website
Patent Primary Examiner
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US Patent 07715228 Cross-point magnetoresistive memory
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07715228
Date of patent
May 11, 2010
Patent application number
12229586
Date Filed
August 25, 2008
Patent primary examiner
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