Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kai D. Feng0
Fen Chen0
John M. Aitken0
Date of Patent
May 11, 2010
Patent Application Number
12109081
Date Filed
April 24, 2008
Patent Primary Examiner
Patent abstract
The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.
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