Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 18, 2010
Patent Application Number
12133605
Date Filed
June 5, 2008
Patent Primary Examiner
Patent abstract
There is disclosed a semiconductor device comprising a P-channel MIS transistor which includes an N-type semiconductor layer, a first gate insulating layer formed on the N-type semiconductor layer and containing a carbon compound of a metal, and an N-channel MIS transistor which includes a P-type semiconductor layer, a second gate insulating layer formed on the P-type semiconductor layer, and a second gate electrode formed on the second gate insulating layer.
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