Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 18, 2010
Patent Application Number
11530710
Date Filed
September 11, 2006
Patent Primary Examiner
Patent abstract
Disclosed herein is a method of manufacturing a semiconductor device, including the steps of: forming an interlayer insulating film on a semiconductor substrate; forming a metal mask on the interlayer insulating film; forming a pattern trench in the metal mask and the interlayer insulating film by etching away parts of the metal mask and the interlayer insulating film; forming a conductive layer on the interlayer insulating film so as to fill in the pattern trench; and polishing the excessive conductive layer and the metal mask on the interlayer insulating film so as to leave the conductive layer in the pattern trench.
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