US Patent 7723198 Integrated semiconductor cascode circuit for high-frequency applications

An integrated semiconductor cascode circuit is provided that comprises an emitter layer, a first base area, a second base area, an intermediate area and a collector area. The first base area is arranged between the emitter layer and the intermediate area, and the second base area is arranged between the intermediate area and the collector area. A dielectric layer that is provided with a central opening is arranged between the first base area and the second base area. The invention also relates to a method for the production of said semiconductor cascode circuit.