Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeshi Iwamoto0
Yasuhiro Ido0
Date of Patent
June 1, 2010
0Patent Application Number
115845130
Date Filed
October 23, 2006
0Patent Primary Examiner
Patent abstract
A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.
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