Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Keishi Tachikawa0
Date of Patent
June 8, 2010
0Patent Application Number
121853140
Date Filed
August 4, 2008
0Patent Primary Examiner
Patent abstract
Forming an impurity region 6 and an impurity region 5 having a lower concentration than the impurity region 6 in a lower layer region of a gate electrode close to the boundary with a signal electron-voltage conversion section of a horizontal CCD outlet makes it possible to smooth a potential distribution at the time of transfer, improve the transfer efficiency, increase the number of saturated electrons and reduce variations in the transfer efficiency and variations in saturation.
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