Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Jang Hwang0
Jiong-Ping Lu0
Date of Patent
June 8, 2010
Patent Application Number
11499308
Date Filed
August 3, 2006
Patent Primary Examiner
Patent abstract
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.
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