Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasuyuki Matsuoka0
Yoshiaki Fukuzumi0
Hideaki Aochi0
Hiroyasu Tanaka0
Masaru Kidoh0
Masaru Kito0
Ryota Katsumata0
Date of Patent
June 8, 2010
Patent Application Number
12132181
Date Filed
June 3, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section.
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