Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 15, 2010
Patent Application Number
12349747
Date Filed
January 7, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
A junction field effect transistor comprises an insulating layer formed in a substrate. A source region of a first conductivity type is formed on the insulating layer, and a drain region of the first conductivity type is formed on the insulating layer and spaced apart from the drain region. A channel region of the first conductivity type is located between the source region and the drain region and formed on the insulating layer. A gate region of the second conductivity type surrounds all surfaces of a length of the channel region such that the channel region is embedded within the gate region.
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