Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shinichi Ogawa0
Akira Furuya0
Hiroshi Okamura0
Nobuyuki Otsuka0
Date of Patent
June 15, 2010
0Patent Application Number
121781510
Date Filed
July 23, 2008
0Patent Primary Examiner
Patent abstract
An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.
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