Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 15, 2010
Patent Application Number
11706762
Date Filed
February 15, 2007
Patent Primary Examiner
Patent abstract
Metal-semiconductor field-effect transistors (MESFETS) are provided. A MESFET is provided having a source region, a drain region and a gate. The gate is between the source region and the drain region. A p-type conductivity layer is provided beneath the source region, the p-type conductivity layer being self-aligned to the gate. Related methods of fabricating MESFETs are also provided herein.
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