Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sukesh Sandhu0
Gurtej S. Sandhu0
Date of Patent
July 6, 2010
0Patent Application Number
114866180
Date Filed
July 14, 2006
0Patent Primary Examiner
Patent abstract
A first dielectric layer is formed over a substrate. A single layer first conductive layer that acts as a floating gate is formed over the first dielectric layer. A trough is formed in the first conductive layer to increase the capacitive coupling of the floating gate with a control gate. An intergate dielectric layer is formed over the floating gate layer. A second conductive layer is formed over the second dielectric layer to act as a control gate.
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