US Patent 7750381 Semiconductor device and method of manufacturing semiconductor device

In one aspect of the present invention, a semiconductor device may include a Si substrate, a gate electrode provided on the semiconductor via a gate dielectric layer, a first epitaxially grown layer provided on the Si substrate, a channel region provided in the Si substrate below the gate electrode, a source/drain region provided in the first epitaxially grown layer sandwiching the channel region, and having a first conductivity type impurity, a second epitaxially grown layer provided between the channel region and the first epitaxially grown layer, and provided below the gate electrode, and having a second conductivity type impurity opposite to the first conductivity type.