Patent attributes
A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed in the upper part of the semiconductor substrate so as to be spaced; a channel region formed in a part of the semiconductor substrate between the source region and the drain region; a first dielectric film formed on the channel region of the semiconductor substrate; a second dielectric film formed on the first dielectric film and having a higher permittivity than the first dielectric film; a third dielectric film formed on at least an end surface of the second dielectric film near the drain region out of end surfaces of the second dielectric film near the source and drain regions; and a gate electrode formed on the second dielectric film and the third dielectric film.
