Patent attributes
A method for fabricating a semiconductor device comprises forming a deposition structure including a first substrate, an insulating layer and a second substrate of a SOI substrate; etching the second substrate located in a boundary of cell and core regions and a peripheral region to form a line-type trench; filling an isolating film in the trench; removing the second substrate and the insulating layer of the peripheral region; performing a selective epitaxial growth (SEG) process using the first substrate exposed in the peripheral region to form an epitaxial layer; and performing a chemical mechanical polishing (CMP) process on the epitaxial layer. As a result, the method has a floating body effect to shorten a developing period and improve a process yield.
