Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ki-Seon Park0
Seung-Jin Yeom0
Deok-Sin Kil0
Han-Sang Song0
Jae-Sung Roh0
Jin-Hyock Kim0
Date of Patent
July 13, 2010
0Patent Application Number
114524070
Date Filed
June 14, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.
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