US Patent 7756176 Interband tunneling intersubband transition semiconductor laser
Patent 7756176 was granted and assigned to Electronics and Telecommunications Research Institute on July, 2010 by the United States Patent and Trademark Office.
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An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.
US Patent 07756176 Interband tunneling intersubband transition semiconductor laser US Patent 7756176 Interband tunneling intersubband transition semiconductor laser
US Patent 07756176 Interband tunneling intersubband transition semiconductor laser
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