Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
July 20, 2010
Patent Application Number
11524258
Date Filed
September 21, 2006
Patent Primary Examiner
Patent abstract
A method of manufacturing a nitride semiconductor device includes the steps of; forming a stripping layer including In on a substrate; forming a nitride semiconductor layer on the stripping layer; causing a decomposition of the stripping layer by increasing a temperature of the stripping layer; irradiating the stripping layer with laser light; and separating the nitride semiconductor layer from the substrate.
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