US Patent 7759690 Gallium nitride-based compound semiconductor light-emitting device
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Patent abstract
An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.
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US Patent 07759690 Gallium nitride-based compound semiconductor light-emitting device US Patent 7759690 Gallium nitride-based compound semiconductor light-emitting device
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Patent Number
0775969000
Patent Number
775969000
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Official Website
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Patent Jurisdiction
Patent Number
077596900
Date of Patent
July 20, 2010
0Patent Application Number
119945490
Date Filed
June 30, 2006
0Official Website
Patent Primary Examiner
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Infobox
Is a
Patent Jurisdiction
Patent Number
077596900
Date of Patent
July 20, 2010
0Patent Application Number
119945490
Date Filed
June 30, 2006
0Official Website
Patent Primary Examiner
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US Patent 07759690 Gallium nitride-based compound semiconductor light-emitting device
Infobox
Is a
Patent jurisdiction
Patent number
07759690
Date of patent
July 20, 2010
Patent application number
11994549
Date Filed
June 30, 2006
Patent primary examiner
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