Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 20, 2010
Patent Application Number
11489558
Date Filed
July 20, 2006
Patent Primary Examiner
Patent abstract
A semiconductor structure of a high side driver includes an ion-doped junction. The ion-doped junction includes a substrate and a deep well. The deep well is formed in the substrate and has a first concave structure. The ion-doped junction includes a semiconductor region connected to the first concave structure of the deep well and having substantially the same ion-doping concentration as the substrate.
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