Patent attributes
A variable resistance element (1) whose resistance changes with application of a voltage pulse is brought to a low resistance state by applying an erase pulse to a path shown by the broken line through selection of selection transistors. An erase pulse limiting resistance (2) is inserted in the broken-line path. The resistance value (Re) of the erase pulse limiting resistance (2) is set so that a first resistance value as the sum of all the ON resistance values of the selection transistors, Re and the wiring resistance in the path is equal to or more than a bulk resistance value of a thin film material used in the variable resistance element (1), to prevent the resistance of the variable resistance element (1) from decreasing to the bulk resistance value at which stable resistance change is not resumed.
