US Patent 7760785 Group-III nitride semiconductor device
Patent 7760785 was granted and assigned to NEC Corporation on July, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.
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US Patent 07760785 Group-III nitride semiconductor device US Patent 7760785 Group-III nitride semiconductor device
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Patent Number
0776078500
Patent Number
776078500
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
077607850
Date of Patent
July 20, 2010
0Patent Application Number
109915440
Date Filed
November 19, 2004
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
077607850
Date of Patent
July 20, 2010
0Patent Application Number
109915440
Date Filed
November 19, 2004
0Official Website
Patent Primary Examiner
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US Patent 07760785 Group-III nitride semiconductor device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07760785
Date of patent
July 20, 2010
Patent application number
10991544
Date Filed
November 19, 2004
Patent primary examiner
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