Patent attributes
A method for manufacturing a semiconductor device. In one example embodiment, a method for manufacturing a semiconductor device includes various steps. First, a dielectric layer is formed on the whole surface of a semiconductor substrate that includes an upper surface of a transistor. Next, a trench and a contact hole are formed by etching the dielectric layer so that the upper surface of the transistor is exposed. Then, a contact is formed by embedding a first conductive layer in the contact hole. Next, an etching stop layer is selectively forming on an upper part of the contact. Then, the semiconductor device is blanket-etched such that the first conductive layer remains in the trench. Next, the etching stop layer is removed. Finally, a metal line is formed by embedding a second conductive layer in the trench.
