Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 27, 2010
Patent Application Number
11031637
Date Filed
January 7, 2005
Patent Primary Examiner
Patent abstract
The present invention discloses several preferred mask-programmable 3-D memory (3D-MPROM) structures, including pillar-shaped 3D-MPROM, natural-junction 3D-MPROM, interleaved 3D-MPROM, and separate 3D-MPROM. The present invention also makes further improvements to its peripheral circuits. The use of sense-amplifier can significantly lower the leakage-current requirement on the 3D-ROM memory cell. Self-timing can improve the 3D-ROM speed and reduce its power consumption.
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