Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 27, 2010
Patent Application Number
12174660
Date Filed
July 17, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device for high frequency includes a channel region fabricated on a compound semiconductor substrate, a gate electrode fabricated on the channel region, a source electrode and a drain electrode alternately fabricated on the channel region by sandwiching the gate electrode, a bonding pad to be connected to an external circuit, and an air-bridge having one end connected to the source electrode or the drain electrode above and outside the channel region, and the other end connected to the bonding pad.
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