Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Haeng Leem Jeon0
Date of Patent
July 27, 2010
0Patent Application Number
118486400
Date Filed
August 31, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device and a method of fabricating same are provided. According to an embodiment, a gate insulating layer and a gate are sequentially formed on a substrate, and a pocket ion implant region is formed at sides and below a portion of the gate at a predetermined depth in the substrate. An LDD ion implant region can be formed between the pocket ion implant region and the surface of the substrate. A spacer is formed on sides of the gate, and a deep source/drain region is formed by ion-implanting BF2 within the substrate at sides of the spacer.
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