Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tomonori Morizumi0
Atsuo Michiue0
Hiroaki Takahashi0
Date of Patent
July 27, 2010
0Patent Application Number
120334040
Date Filed
February 19, 2008
0Patent Primary Examiner
Patent abstract
A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film.
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