Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroyuki Kitamura0
Date of Patent
August 3, 2010
0Patent Application Number
120507190
Date Filed
March 18, 2008
0Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device of the present invention is a method of manufacturing a semiconductor device that is provided with a step of successively forming a gate insulating film and a gate electrode on a semiconductor substrate and a step of forming a silicon nitride film that covers at least the gate insulating film and the side portions of the gate electrode, in which the silicon nitride film is formed by laminating a plurality of silicon nitride layers by repeating a step of forming a silicon nitride layer of a predetermined thickness by the low-pressure chemical vapor deposition method and a step of exposing the silicon nitride layer to nitrogen.
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