Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kangguo Cheng0
Date of Patent
August 3, 2010
Patent Application Number
11873735
Date Filed
October 17, 2007
Patent Primary Examiner
Patent abstract
Trench capacitors having small and large sizes can be formed simultaneously using a combined lithography process in which openings in a photomask have the same dimensions and spacings. Larger capacitors are formed when the openings in the photomask are aligned with one crystal plane of the semiconductor substrate causing the resulting trenches in the semiconductor substrate to merge. Smaller capacitors are formed when the openings in the photomask are aligned with another crystal plane of the semiconductor substrate in which case each trench remains separate from other trenches.
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