Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 3, 2010
Patent Application Number
12031693
Date Filed
February 14, 2008
Patent Primary Examiner
Patent abstract
A processing layer, such as silicon, is formed on a metal silicide contact followed by a metal layer. The silicon and metal layers are annealed to increase the thickness of the metal silicide contact. By selectively increasing the thickness of silicide contacts, Rs of transistors in iso and nested regions can be matched.
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