US Patent 7768090 Semiconductor photodetector device
Patent 7768090 was granted and assigned to Panasonic on August, 2010 by the United States Patent and Trademark Office.
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A semiconductor photodetector device includes a light receiving operation section converting incident light to an electric signal and a current amplifying operation section amplifying the electric signal. The light receiving operation section includes: a first conductivity type semiconductor layer a formed on a first conductivity type semiconductor substrate; a second conductivity type first semiconductor region formed on the semiconductor layer; and a first conductivity type second semiconductor region formed on the semiconductor layer and separated from the first semiconductor region. The current amplifying operation section includes: the second semiconductor region; a second conductivity type third semiconductor region formed in the semiconductor substrate; a second conductivity type fourth semiconductor region formed on the third semiconductor region and separated from the second semiconductor region.
US Patent 07768090 Semiconductor photodetector device US Patent 7768090 Semiconductor photodetector device
US Patent 07768090 Semiconductor photodetector device
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