Patent attributes
An inductance formed in a stacking of insulating layers, the inductance comprising first and second half-turns, each first half-turn being at least partly symmetrical to one of the second half-turns, the first half-turns being distributed in first groups of first half-turns at least partly aligned along the insulating layer stacking direction and the second half-turns being distributed in second groups of second half-turns at least partly aligned along the insulating layer stacking direction. For any pair of first adjacent half-turns of a same group, one of the first half-turns in the pair is electrically series-connected to the other one of the first half-turns in the pair by a single second half turn and for each pair of second adjacent half-turns of a same group, one of the second half-turns in the pair is electrically series-connected to the other one of the second half-turns in the pair by a single first half-turn.
