Patent 7769065 was granted and assigned to Sumitomo Electric Industries on August, 2010 by the United States Patent and Trademark Office.
A semiconductor optical device includes a GaAs substrate having a surface with periodic projections and recesses for a diffraction grating; a III-V compound semiconductor layer provided on the surface of the GaAs substrate; and an active layer which is made of III-V compound semiconductor containing nitrogen and arsenic as constituent elements, the active layer being provided on the III-V compound semiconductor layer.