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US Patent 7772083 Trench forming method and structure
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Patent
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Date Filed
December 29, 2008
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Date of Patent
August 10, 2010
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Patent Application Number
12344733
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Patent Citations Received
US Patent 12119352 IC structure including porous semiconductor layer in bulk substrate adjacent trench isolation
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US Patent 12027582 IC structure including porous semiconductor layer under trench isolation
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Patent Inventor Names
Alan Bernard Botula
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Alvin Jose Joseph
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James Albert Slinkman
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Max Gerald Levy
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Michael Lawrence Gautsch
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
7772083
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Patent Primary Examiner
S. V. Clark
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