Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wensheng Wang0
Date of Patent
August 10, 2010
0Patent Application Number
110235760
Date Filed
December 29, 2004
0Patent Primary Examiner
Patent abstract
A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.
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