Patent attributes
An N-channel device (40, 60) is described having a very lightly doped substrate (42) in which spaced-apart P (46) and N (44) wells are provided, whose lateral edges (461, 45) extending to the surface (47). The gate (56) overlies the surface (47) between the P (46) and N (44) wells. The P-well edge (461) adjacent the source (50) is substantially aligned with the left gate edge (561). The N-well edge (45) lies at or within the right gate edge (562), which is spaced a first distance (471) from the drain (48). The N-well (44) desirably includes a heavier doped region (62) in ohmic contact with the drain (48) and with its left edge (621) located about half way between the right gate edge (562) and the drain (48). A HALO implant pocket (52) is provided underlying the left gate edge (561) using the gate (56) as a mask. The resulting device (40, 60) operates at higher voltage with lower Rdson, less HCI and very low off-state leakage. P and N dopants are interchanged to provide P-channel devices.
