Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 17, 2010
Patent Application Number
11830376
Date Filed
July 30, 2007
Patent Primary Examiner
Patent abstract
The present invention provides a method of forming a self-aligned heterobipolar transistor (HBT) device in a BiCMOS technology. The method includes forming a raised extrinsic base structure by using an epitaxial growth process in which the growth rate between single crystal silicon and polycrystalline silicon is different and by using a low temperature oxidation process such as a high-pressure oxidation (HIPOX) process to form a self-aligned emitter/extrinsic base HBT structure.
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