Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasutsugu Soeta0
Nobuhiko Noto0
Date of Patent
August 17, 2010
Patent Application Number
12227436
Date Filed
May 14, 2007
Patent Primary Examiner
Patent abstract
A method is provided for manufacturing a bonded wafer by an ion implantation delamination method, including bonding a base wafer with a bond wafer having a microbubble layer formed by ion implantation, delaminating the wafers along the micro bubble layer as a boundary, and removing a periphery of a thin film formed on the base wafer by the delamination. The removal step is performed by dry etching that supplies an etching gas from a nozzle, and the dry etching is performed by adjusting an inner diameter of the gas-jetting port of the nozzle, and a distance between the gas-jetting port of the nozzle and a surface of the thin film.
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