Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroshi Watanabe0
Fumitaka Arai0
Date of Patent
August 17, 2010
0Patent Application Number
118348860
Date Filed
August 7, 2007
0Patent Primary Examiner
Patent abstract
A non-volatile semiconductor storage device includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed of polysilicon on the first insulating layer, a pair of conductor regions formed on the first insulating layer to pass through the semiconductor layer and to sandwich a part of the semiconductor layer, and formed of a metal or a silicide, a tunnel layer formed on the part of the semiconductor layer sandwiched between the pair of conductor regions, a charge storage layer formed on the tunnel layer, a second insulating layer formed on the charge storage layer, and a control gate formed on the second insulating layer.
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