Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zhenqiang Ma0
Max G. Lagally0
Date of Patent
August 17, 2010
0Patent Application Number
114521350
Date Filed
June 13, 2006
0Patent Primary Examiner
Patent abstract
The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.
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