Patent 7778060 was granted and assigned to Seiko Epson on August, 2010 by the United States Patent and Trademark Office.
A ferroelectric memory includes: a memory cell having a ferroelectric capacitor, wherein, in a read-out operation, a first signal Q1 is given when a first voltage is applied to the ferroelectric capacitor, and a second signal Q2 is given when a second voltage having an identical magnitude as a magnitude of the first voltage in a different polarity is applied to the ferroelectric capacitor, and a judgment is made that the memory cell stores first data when Q1/Q2 is greater than ½, and second data when Q1/Q2 is smaller than ½.