Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 24, 2010
Patent Application Number
11390641
Date Filed
March 28, 2006
Patent Primary Examiner
Patent abstract
A method for forming a damascene structure utilizes dual hard mask layers and a thin etch stop layer, and does not require a sacrificial layer within the via. A floating etch stop layer can additionally be used. The dual hard masks may be formed of dielectric and neither of the hard masks is required to contain metal. The thin etch stop layer reduces capacitance problems.
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