Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 24, 2010
Patent Application Number
11610199
Date Filed
December 13, 2006
Patent Primary Examiner
Patent abstract
A method for fabricating a SiC MOSFET is disclosed. The method includes growing a SiC epilayer over a substrate, planarizing the SiC epilayer to provide a planarized SiC epilayer, and forming a gate dielectric layer in contact with the planarized epilayer.
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