Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shau-Lin Shue0
Chih-Wei Chang0
Chii-Ming Wu0
Mei-Yun Wang0
Chen-Tung Lin0
Chiang-Ming Chuang0
Date of Patent
August 24, 2010
0Patent Application Number
118383760
Date Filed
August 14, 2007
0Patent Primary Examiner
Patent abstract
A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening by a metal deposition process employing a target which includes metal and silicon. The metal-silicide layer may then be annealed.
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