Patent 7781774 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on August, 2010 by the United States Patent and Trademark Office.
A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate electrode; a source electrode connected to the data line; a drain electrode opposite the source electrode; an organic semiconductor partly in contact with the source electrode and the drain electrode; a gate insulating member positioned between the gate electrode and the organic semiconductor; and an insulating bank having an opening where the organic semiconductor and the gate insulating member are positioned and is formed in a cross shape in which a horizontal part and a vertical part intersect.