Patent attributes
A nonvolatile semiconductor memory includes: a memory cell transistor including a gate insulating film, a floating gate electrode, an inter-gate insulating film, and a control gate electrode; a low voltage transistor constituted by a low voltage gate insulating film, a floating gate electrode, an inter-gate insulating film having an opening, a control gate electrode, a first gate contact plug, and a first metallic salicide film electrically in contact with the first gate contact plug; and a high voltage transistor constituted by a high voltage gate insulating film, a floating gate electrode, an inter-gate insulating film having an opening, a control gate electrode, a second gate contact plug, and a second metallic salicide film electrically in contact with the second gate contact plug. The metallic salicide film is formed only directly beneath the gate contact plug.
