Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 24, 2010
Patent Application Number
12101271
Date Filed
April 11, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device including a Hall effect sensor and related method. The Hall effect device includes a substrate having a first conductivity type and an epitaxial layer having a second conductivity type defining a Hall effect portion. A conductive buried layer having the second conductivity type is situated between the epitaxial layer and the substrate. First and second output terminals and first and second voltage terminals are provided, with the second voltage terminal being coupled to the conductive buried layer.
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